TITLE

Intersublevel photoresponse of (In,Ga)As/GaAs quantum-dot photodetectors: Polarization and temperature dependence

AUTHOR(S)
Pal, D.; Chen, L.; Towe, E.
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/1/2003, Vol. 83 Issue 22, p4634
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the polarization dependence of intraband photoresponse of (In,Ga)As/GaAs quantum-dot device structures for light polarized parallel and perpendicular to the layers. Strong photoresponse due to intersublevel transitions induced by both s- and p-polarized infrared light was observed. Within the plane of the layers, it is found that the photoresponse for s-polarized light aligned along the [110] crystallographic direction is virtually identical to that in the [110] direction, suggesting that, at least in the x-y plane, the dots are symmetric. The devices studied were found to operate up to a temperature of around 100–105 K. © 2003 American Institute of Physics.
ACCESSION #
11503287

 

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