Negative charge injection to a positively charged SiO[sub 2] hole exposed to plasma etching in a pulsed two-frequency capacitively coupled plasma in CF[sub 4]/Ar

Ohmori, T.; Goto, T. K.; Kitajima, T.; Makabe, T.
December 2003
Applied Physics Letters;12/1/2003, Vol. 83 Issue 22, p4637
Academic Journal
As microchips become smaller, the threat of damage to the device elements of Si semiconductors by charging during plasma etching will become significant. It will be of first importance to establish a plasma-etching technique that does not involve charging, i.e., “charging-free plasma processing.” Here, we utilize the effect of negative charge acceleration under a double layer in order to neutralize the charge inside a microstructure exposed to plasma etching. We have constructed a dual measurement system consisting of an emission in an interface and a contact hole charging on a SiO[sub 2] wafer during etching in two-frequency capacitively coupled plasma (2f-CCP) in CF[sub 4]/Ar and pure Ar. A reduction in charging voltage is measured in the pulsed operation both of the plasma power source and of the wafer bias in the 2f-CCP in electronegative gases, CF[sub 4]/Ar. © 2003 American Institute of Physics.


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