Radiation-induced acceptor deactivation in bipolar devices: Effects of electric field

Rashkeev, S. N.; Fleetwood, D. M.; Schrimpf, R. D.; Pantelides, S. T.
December 2003
Applied Physics Letters;12/1/2003, Vol. 83 Issue 22, p4646
Academic Journal
We show that radiation-induced boron acceptor deactivation in silicon bipolar transistors is due primarily to direct neutralization by protons. The strong dependence of the deactivation process on electric field is due mainly to the transport of H[sup +] in the depletion region. The observed dependence of the neutralized-acceptor concentration on the irradiation bias is explained by analytical modeling and Monte Carlo simulations. Neutralization of protons in the Si is not necessary to describe the observed dopant deactivation. © 2003 American Institute of Physics.


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