Visible and near-infrared alternating-current electroluminescence from sputter-grown GaN thin films doped with Er

Joo Han Kim, I.; Shepherd, N.; Davidson, M. R.; Holloway, Paul H.
November 2003
Applied Physics Letters;11/24/2003, Vol. 83 Issue 21, p4279
Academic Journal
A demonstration of visible and near-infrared (NIR) alternating-current electroluminescence from sputter-grown GaN thin films doped with Er is reported. The alternating-current thin-film electroluminescent (ACTFEL) devices were constructed using a standard single-insulating structure, Al/GaN:Er/aluminum–titanium–oxide/indium–tin–oxide/Corning 7059 glass. Visible emissions peaked at 550 and 665 nm as well as NIR emissions centered at 1000 and 1550 nm were observed from the fabricated ACTFEL devices operating at room temperature. The visible and NIR emissions at 550, 665, 1000, and 1550 nm were attributed to the Er[sup 3+] 4f–4f intrashell transitions from the [sup 4]S[sub 3/2], [sup 4]F[sub 9/2], [sup 4]I[sub 11/2], and [sup 4]I[sub 13/2] excited-state levels to the [sup 4]I[sub 15/2] ground state, respectively. The green 550 nm emission had a larger dI/dV and a higher threshold voltage, V[sub th] than the NIR 1550 nm emission, which could result from the need for higher electron impact energy to impact-excite the Er ion into the higher-energy excited-states for emission of green light. © 2003 American Institute of Physics.


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