TITLE

Enhancement of room-temperature photoluminescence in InAs quantum dots

AUTHOR(S)
Lu, W.; Ji, Y. L.; Chen, G. B.; Tang, N. Y.; Chen, X. S.; Shen, S. C.; Zhao, O. X.; Willander, M.
PUB. DATE
November 2003
SOURCE
Applied Physics Letters;11/24/2003, Vol. 83 Issue 21, p4300
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report pronounced enhancement of room-temperature photoluminescence up to 80-fold induced by proton implantation and the rapid thermal annealing process in a multilayer InAs/GaAs quantum-dot structure. This effect is studied by a combination of material methods and resulted from both proton passivation and carrier capture enhancement effects. The maximum photoluminescence peak shift is about 23 meV, resulting from the intermixing of quantum dots. Linear dependence behavior as observed for both the nonradiative recombination time and carrier relaxation time on the ion-implantation dose. Maximum enhancement of the photoluminescence is observed for a proton implantation dose of 1.0×10[sup 14] cm[sup -2] followed by rapid thermal annealing at 700 °C. These effects will be useful for quantum dot optoelectronic devices. © 2003 American Institute of Physics.
ACCESSION #
11447632

 

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