Enhancement of room-temperature photoluminescence in InAs quantum dots

Lu, W.; Ji, Y. L.; Chen, G. B.; Tang, N. Y.; Chen, X. S.; Shen, S. C.; Zhao, O. X.; Willander, M.
November 2003
Applied Physics Letters;11/24/2003, Vol. 83 Issue 21, p4300
Academic Journal
We report pronounced enhancement of room-temperature photoluminescence up to 80-fold induced by proton implantation and the rapid thermal annealing process in a multilayer InAs/GaAs quantum-dot structure. This effect is studied by a combination of material methods and resulted from both proton passivation and carrier capture enhancement effects. The maximum photoluminescence peak shift is about 23 meV, resulting from the intermixing of quantum dots. Linear dependence behavior as observed for both the nonradiative recombination time and carrier relaxation time on the ion-implantation dose. Maximum enhancement of the photoluminescence is observed for a proton implantation dose of 1.0×10[sup 14] cm[sup -2] followed by rapid thermal annealing at 700 °C. These effects will be useful for quantum dot optoelectronic devices. © 2003 American Institute of Physics.


Related Articles

  • Mode splitting in photoluminescence spectra of a quantum-dot-embedded microcavity. Hu, C. Y.; Zheng, H. Z.; Zhang, J. D.; Zhang, H.; Yang, F. H.; Zeng, Y. P. // Applied Physics Letters;2/3/2003, Vol. 82 Issue 5, p665 

    A microcavity structure, containing self-assembled InGaAs quantum dots, is studied by angle-resolved photoluminescence (PL) spectroscopy. A doublet with the splitting energy of 0.5-1.5 nm appears when the detection angle is larger than 35°. This doublet is identified as mode splitting (not...

  • Photo-oxidation-enhanced coupling in densely packed CdSe quantum-dot films. Wang, Xiaoyong; Zhang, Jiayu; Nazzal, Amjad; Xiao, Min // Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p162 

    Photo-oxidation of densely packed monolayer of CdSe quantum dots (QDs) was studied by time-resolved photoluminescence (PL) spectroscopy. Electrons yielded in QDs by the strong laser-pulse irradiation can assist the oxidation of CdSe QDs. Such rapid photo-oxidation does not introduce more...

  • Line spectra from doped nano-oxide: A design for nanooptics. Altman, Igor S.; Pikhitsa, Peter V.; Mansoo Choi; Jae In Jeong, Peter V.; Ho-Jun Song; Agranovski, Igor F.; Bostrom, Thor F. // Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3689 

    We report the photoluminescence (PL) observation of extremely sharp zero-phonon lines originating from transitions of Mn[sup 2+] and Cr[sup 3+] ions embedded into MgO matrix of nanoscale (nanocrystals and films). The excellent performance of PL compared to that from quantum dots makes our...

  • Persistence of In/Ga intermixing beyond the emission energy blueshift saturation of proton-implanted InAs/GaAs quantum dots. Zaâboub, Z.; Ilahi, B.; Salem, B.; Aimez, V.; Morris, D.; Sfaxi, L.; Maaref, H. // Journal of Applied Physics;Jul2010, Vol. 107 Issue 12, p124306 

    Low temperature photoluminescence (PL) measurements are carried out to investigate the influence of the high extent of intermixing induced by proton implantation and subsequent annealing on the optical and electronic properties of the InAs/GaAs quantum dots (QDs). Several QDs structures were...

  • Effect of conjugation with biomolecules on photoluminescence and structural characteristics of CdSe/ZnS quantum dots. Borkovska, L. V.; Korsunska, N. E.; Kryshtab, T. G.; Germash, L. P.; Pecherska, E. Yu.; Ostapenko, S.; Chornokur, G. // Semiconductors;Jun2009, Vol. 43 Issue 6, p775 

    The photoluminescence and photoluminescence excitation spectra, the X-ray diffraction patterns, and the effect of conjugation with biomolecules upon these characteristics are studied for silanized CdSe/ZnS quantum dots. Along with the band of annihilating excitons in the quantum dots, the...

  • Size-dependent radiative emission of PbS quantum dots embedded in Nafion membrane. Chen, Y.; Yu, D.; Li, B.; Chen, X.; Dong, Y.; Zhang, M. // Applied Physics B: Lasers & Optics;Apr2009, Vol. 95 Issue 1, p173 

    PbS quantum dots (QDs) have been incorporated in a Nafion membrane, where the QD sizes were adjusted by changing the reaction time due to the steady growing process. The radiative emissions of the samples were investigated by optical absorption, photoluminescence (PL), and time-resolved PL...

  • Specific Features of Photoluminescence of InAs/GaAs QD Structures at Different Pumping Levels. Kulbachinskii, V. A.; Rogozin, V. A.; Lunin, R. A.; Belov, A. A.; Karuzskiĭ, A. L.; Perestoronin, A. V.; Zdoroveishchev, A. V. // Semiconductors;Nov2005, Vol. 39 Issue 11, p1308 

    Photoluminescence spectra of InAs/GaAs QD structures have been studied at different pumping powers and temperatures. At low pumping levels, one of the spectral lines in an undoped sample is shifted as the power increases. As the temperature increases, the luminescence intensity in the...

  • Temperature dependence of photoreflectance in InAs/GaAs quantum dots. Lai, C. M.; Chang, F. Y.; Chang, C. W.; Kao, C. H.; Lin, H. H.; Jan, G. J.; Lee, Johnson // Applied Physics Letters;6/2/2003, Vol. 82 Issue 22, p3895 

    Temperature dependent photoreflectance (PR) and photoluminescence experiments of the InAs/GaAs quantum dot (QD) structures were performed. At 20 K, effective band-gap transitions due to the InAs QDs, wetting layers, and GaAs buffer and cap layers were identified. Transition energies of the...

  • Exciton photoluminescence and energy in a percolation cluster of ZnSe quantum dots as a fractal object. Bondar, N.; Brodyn, M. // Semiconductors;May2012, Vol. 46 Issue 5, p625 

    The results of studies of samples containing ZnSe quantum dots with a density corresponding to or considerably higher than the exciton percolation threshold, at which quantum dots form conglomerates, are reported. Excitonic emission from a percolation cluster of bound quantum dots as a fractal...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics