Smooth relaxed Si[sub 0.75]Ge[sub 0.25] layers on Si(001) via in situ rapid thermal annealing

Hong, S.; Foo, Y. L.; Bratland, K. A.; Spila, T.; Ohmori, K.; Sardela Jr., M. R.; Greene, J. E.; Yoon, E.
November 2003
Applied Physics Letters;11/24/2003, Vol. 83 Issue 21, p4321
Academic Journal
Atomically flat, fully strained Si[sub 1-x]Ge[sub x] layers with thicknesses ranging from 8 to 180 nm were grown on Si(001) at 450 °C by gas-source molecular beam epitaxy from Ge[sub 2]H[sub 6]/Si[sub 2]H[sub 6] mixtures. We show that smooth, relaxed alloy layers are obtained, without the necessity of using several-microns-thick compositionally graded layers, via in situ rapid thermal annealing of fully strained Si[sub 1-x]Ge[sub x](001) layers at 1000 °C for 10 s. Relaxed Si[sub 0.75]Ge[sub 0.25](001) layers with thicknesses of 100–180 nm were found to have surface widths of ≃5 nm, comparable to the best results obtained using thick graded buffer layers. © 2003 American Institute of Physics.


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