Thermal stability of internal gettering of iron in silicon and its impact on optimization of gettering

Zhang, Peng; Väinolää, Hele; Istratov, Andrei A.; Weber, Eicke R.
November 2003
Applied Physics Letters;11/24/2003, Vol. 83 Issue 21, p4324
Academic Journal
The redissolution behavior of gettered iron was studied in p-type Czochralski-grown silicon with a doping level of 2.5×10[sup 14] cm[sup -3] and an oxide precipitate density of 5×10[sup 9] cm[sup -3]. The concentrations of interstitial iron and iron–boron pairs were measured by deep level transient spectroscopy. It was found that the dependence of redissolved iron concentration on annealing time can be fitted by the function C(t)=C[sub 0][1-exp(-t/τ[sub diss])], and the dissolution rate τ[sub diss][sup -1] has an Arrhenius-type temperature dependence of τ[sub diss][sup -1]=4.01×10[sup 4]×exp[-(1.47±0.10) eV/k[sub B]T] s[sup -1]. Based on this empirical equation, we predict how stable the gettered iron is during different annealing sequences and discuss implications for optimization of internal gettering. © 2003 American Institute of Physics.


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