Identification of a Br-correlated bandgap state in GaAs by radiotracer spectroscopy

Albrecht, F.; Pasold, G.; Grillenberger, J.; Achtziger, N.; Witthuhn, W.; Risse, M.; Vianden, R.; Dietrich, M.
November 2003
Applied Physics Letters;11/24/2003, Vol. 83 Issue 21, p4333
Academic Journal
A deep energy level of bromine in the bandgap of GaAs was determined by means of Radiotracer deep-level transient spectroscopy (DLTS) measurements. For this purpose, the radioactive isotope [sup 77]Br was implanted in p-type as well as in n-type GaAs. In the course of repeated DLTS measurements at n-type GaAs, the spectra are dominated by the occurrence of one bandgap state with the trap parameters E[sub t]=E[sub C]-0.45(2) eV and σ=2×10[sup -14] cm[sup 2]. This level vanishes on time scales of the nuclear half-life of the elemental transmutation from [sup 77]Br to [sup 77]Se (T[sub 1/2]=57 h). Thereby, a definite correlation can be drawn between the observed bandgap state and a Br-correlated defect. © 2003 American Institute of Physics.


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