TITLE

Field-effect transistors on tetracene single crystals

AUTHOR(S)
de Boer, R. W. I.; Klapwijk, T. M.; Morpurgo, A. F.
PUB. DATE
November 2003
SOURCE
Applied Physics Letters;11/24/2003, Vol. 83 Issue 21, p4345
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of 0.4 cm[sup 2]/V s. The nonmonotonous temperature dependence of the mobility, its weak gate voltage dependence, as well as the sharpness of the subthreshold slope, confirm the high quality of single-crystal devices. This is due to the fabrication process that does not substantially affect the crystal quality. © 2003 American Institute of Physics.
ACCESSION #
11447617

 

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