Real-time observation of the energy band diagram during microcrystalline silicon p–i interface formation

Fujiwara, Hiroyuki; Kondo, Michio; Matsuda, Akihisa
November 2003
Applied Physics Letters;11/24/2003, Vol. 83 Issue 21, p4348
Academic Journal
We have performed real-time infrared attenuated total reflection spectroscopy to characterize free-carrier absorption during microcrystalline silicon (μc-Si:H) p–i interface formation. In the μc-Si:H i-layer growth on the p layer, a free-carrier concentration in the p layer showed a large variation, in accordance with a built-in potential present at the p/i interface. We demonstrate that real-time observation of the energy band diagram is possible during semiconductor thin-film growth by employing free carriers in a doped layer as a probe. © 2003 American Institute of Physics.


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