Native hole traps of ferromagnetic Ga[sub 1-x]Mn[sub x]As layers on (100) GaAs substrates

Yoon, I. T.; Park, C. J.; Cho, H. Y.; Kang, T. W.; Kim, K. H.; Kim, D. J.
November 2003
Applied Physics Letters;11/24/2003, Vol. 83 Issue 21, p4354
Academic Journal
Dominant hole traps of ferromagnetic Ga[sub 1-x]Mn[sub x]As and epilayers with an Mn mole fraction of x≈2.2% and 4.4% were identified employing deep-level transient spectroscopy. Three hole traps with binding energies of E[sub A]=0.38±0.01 eV at 140 K, E[sub B]=0.43±0.01 eV at 220 K, and E[sub C]=0.65±0.01 eV at 300 K above the top of the valence band were observed. Comparing with theoretical data of GaAs, it appears most likely that the trap with E[sub A] is associated with a gallium vacancy (V[sub Ga]) or the arsenic antisite complex (Ga[sub As]+V[sub As]), whereas the traps with E[sub B] and E[sub C] are associated with two charge states of arsenic antisite (As[sub Ga]) defect. The hole capture cross sections were determined as σ[sub p](A)=3.7×10[sup -11], σ[sub p](B)=1.5×10[sup -14], and σ[sub p](C)=1.1×10[sup -14] cm[sup 2], respectively. The samples with x≈2.2% and x≈4.4% show typical behavior for metallic Ga[sub 1-x]Mn[sub x]As and insulator Ga[sub 1-x]Mn[sub x]As, respectively, through Hall measurements. © 2003 American Institute of Physics.


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