TITLE

Native hole traps of ferromagnetic Ga[sub 1-x]Mn[sub x]As layers on (100) GaAs substrates

AUTHOR(S)
Yoon, I. T.; Park, C. J.; Cho, H. Y.; Kang, T. W.; Kim, K. H.; Kim, D. J.
PUB. DATE
November 2003
SOURCE
Applied Physics Letters;11/24/2003, Vol. 83 Issue 21, p4354
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Dominant hole traps of ferromagnetic Ga[sub 1-x]Mn[sub x]As and epilayers with an Mn mole fraction of x≈2.2% and 4.4% were identified employing deep-level transient spectroscopy. Three hole traps with binding energies of E[sub A]=0.38±0.01 eV at 140 K, E[sub B]=0.43±0.01 eV at 220 K, and E[sub C]=0.65±0.01 eV at 300 K above the top of the valence band were observed. Comparing with theoretical data of GaAs, it appears most likely that the trap with E[sub A] is associated with a gallium vacancy (V[sub Ga]) or the arsenic antisite complex (Ga[sub As]+V[sub As]), whereas the traps with E[sub B] and E[sub C] are associated with two charge states of arsenic antisite (As[sub Ga]) defect. The hole capture cross sections were determined as σ[sub p](A)=3.7×10[sup -11], σ[sub p](B)=1.5×10[sup -14], and σ[sub p](C)=1.1×10[sup -14] cm[sup 2], respectively. The samples with x≈2.2% and x≈4.4% show typical behavior for metallic Ga[sub 1-x]Mn[sub x]As and insulator Ga[sub 1-x]Mn[sub x]As, respectively, through Hall measurements. © 2003 American Institute of Physics.
ACCESSION #
11447614

 

Related Articles

  • Gallium implantation induced deep levels in n-type 6H-SIC. Gong, M.; Fung, S. // Journal of Applied Physics;1/1/1999, Vol. 85 Issue 1, p105 

    Presents information on a study which observed two gallium-acceptor levels in the Ga-implanted p+n diodes using deep level transient spectroscopy. Experimental procedure; Results and discussion; Conclusion.

  • Effect of Ga content on defect states in CuIn1-xGaxSe2 photovoltaic devices. Heath, J. T.; Cohen, J. D.; Shafarman, W. N.; Liao, D. X.; Rockett, A. A. // Applied Physics Letters;6/17/2002, Vol. 80 Issue 24, p4540 

    Defects in the band gap of Culn[sub 1-χGa[sub χ]Se[sub 2] have been characterized using transient photocapacitance spectroscopy. The measured spectra clearly show response from a band of defects centered around 0.8 eV from the valence band edge as well as an exponential distribution of...

  • Comment on “Electrically injected spin-polarized vertical-cavity surface-emitting lasers” [Appl. Phys. Lett. 87, 091108 (2005)]. Hägele, D.; Oestreich, M. // Applied Physics Letters;1/30/2006, Vol. 88 Issue 5, p056101 

    The article comments on a report on the realization of a spin-polarized vertical cavity surface emitting laser based on hole spin injection from a ferromagnetic gallium manganese layer. The device bear the potential of a reduced laser threshold and improved polarization and intensity stability....

  • Spacer-dependent transport and magnetic properties of digital ferromagnetic heterostructures. Kreutz, T. C.; Zanelatto, G.; Gwinn, E. G.; Gossard, A. C. // Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4766 

    We examine the relationship between the transport and magnetic properties of digital ferromagnetic heterostructure superlattices in which 0.5 monolayer MnAs planes alternate with undoped GaAs spacer layers. The data show that as the thickness t of the GaAs spacers increases, charge transport and...

  • Theory of Spin Transport Across Domain-Walls in (Ga,Mn)As. Oszwałdowski, Rafał; Majewski, Jacek A.; Dietl, Tomasz // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p1277 

    We present results of numerical calculations of domain-wall resistance in the ferromagnetic semiconductor (Ga,Mn)As. We employ Landauer-Büttiker formalism and the tight binding method. Taking into account the full valence band structure we predict the magnitude of the domain-wall resistance...

  • Energy splitting of the EL2 level in Si-implanted GaAs/GaAs by field-effect deep-level transient spectroscopy. Halder, N. C.; Misra, V. // Journal of Applied Physics;2/1/1993, Vol. 73 Issue 3, p1309 

    Presents information on a study which examined the role of field-effect deep-level transient spectroscopy on the energy splitting of the electron lattice level in silicon-implanted gallium arsenic. Experimental procedures; Analysis and results; Discussion and conclusion.

  • Variable angle spectroscopic ellipsometry: Application to GaAs-AlGaAs multilayer homogeneity characterization. Alterovitz, Samuel A.; Snyder, Paul G.; Merkel, Kenneth G.; Woollam, John A.; Radulescu, David C.; Eastman, Lester F. // Journal of Applied Physics;5/15/1988, Vol. 63 Issue 10, p5081 

    Provides information on a study concerning the application of variable angle spectroscopic ellipsometry to a gallium arsenic-aluminum gallium arsenic multilayer structure to obtain three-dimensional characterization using repetitive measurements. Methods of data analysis; Reproducibility of the...

  • Photoreflectance and photoluminescence spectroscopy of low-temperature GaAs grown by molecular-beam epitaxy. Sinha, S.; Arora, B. M.; Subramanian, S. // Journal of Applied Physics;1/1/1996, Vol. 79 Issue 1, p427 

    Deals with a study which examined the photoreflectance and photoluminescence spectroscopy of low-temperature gallium arsenide grown by molecular-beam epitaxy. Information on modulation-doped photodectector structures; Methodology of the study; Results and discussion.

  • Group-VI impurity-related DX centers in In0.18 Ga0.82As0.28 P0.72. Kwon, Ho Ki; Choe, Byung-Doo; Kwon, S. D.; Lim, H. // Journal of Applied Physics;10/1/1996, Vol. 80 Issue 7, p4211 

    Presents information on a study which investigated the characteristics of sulfur-, selenium-, and tellurium-related deep donors in indium compound layers lattice matched to gallium substrates using deep level transient spectroscopy and thermally stimulated capacitance measurements. Background...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics