Using antiferromagnetic/ferromagnetic bilayers as detection layers in magnetic tunnel junctions

Malinowski, G.; Hehn, M.; Sajieddine, M.; Montaigne, F.; Jouguelet, F.; Canet, F.; Alnot, M.; Lacour, D.; Schuhl, A.
November 2003
Applied Physics Letters;11/24/2003, Vol. 83 Issue 21, p4372
Academic Journal
It is shown that the association of an antiferromagnetic material with a ferromagnetic material in an exchange-coupled bilayer, often used in spintronic devices as a magnetic reference or pinned system, can be used as a detection layer in magnetoresistive sensors. The magnetic response is shown to be reversible and linear in an adjustable field window. The sensitivity is studied as a function of temperature. © 2003 American Institute of Physics.


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