TITLE

Effects of in-plane compressive stress on electrical properties of (Ba,Sr)TiO[sub 3] thin film capacitors prepared by on- and off-axis rf magnetron sputtering

AUTHOR(S)
Woo Young Park, J. M.; Kun Ho Ahn, J. M.; Cheol Seong Hwang
PUB. DATE
November 2003
SOURCE
Applied Physics Letters;11/24/2003, Vol. 83 Issue 21, p4387
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This study investigated the structural and electrical properties of (Ba,Sr)TiO[sub 3] (BST) thin film capacitors with thicknesses ranging from 18 to 215 nm, which were prepared by on- and off-axis rf magnetron sputtering technique on Pt/SiO[sub 2]/Si substrates. The deposition rate and cation composition ratios of the films were controlled to be the same regardless of the sputtering geometry. All the films show elongations in the out-of-plane lattice spacing, suggesting the presence of compressive stress with a smaller value by on-axis sputtering than by the off-axis system. There was no thickness dependence of the strain in the polycrystalline BST films. The BST films deposited using the on-axis system showed a higher bulk dielectric constant with a higher interfacial capacitance and a lower leakage current level than the films produced by the off-axis system. The strain effect was proposed to explain the correlations between the structural and electrical properties. © 2003 American Institute of Physics.
ACCESSION #
11447603

 

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