TITLE

Leakage mechanisms and dielectric properties of Al[sub 2]O[sub 3]/TiN-based metal-insulator-metal capacitors

AUTHOR(S)
Meng, Shuang; Basceri, C.; Busch, B. W.; Derderian, G.; Sandhu, G.
PUB. DATE
November 2003
SOURCE
Applied Physics Letters;11/24/2003, Vol. 83 Issue 21, p4429
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We characterized thin Al[sub 2]O[sub 3] dielectrics with TiN electrodes in a three-dimensional, high-aspect-ratio, metal–insulator–metal capacitor structure. Transmission electron microscopy images did not reveal any interfacial layer(s) or intermixing of the films. This was confirmed by series capacitance analysis. Extensive electrical characterization indicated a well-behaved dielectric response. Time and frequency domain measurements did not show any significant dielectric relaxation. Charge transport was controlled by a direct tunneling mechanism in the field range of 1.5 to 6 MV/cm for a 50 Å film. The Fowler–Nordheim tunneling mechanism dominated the high field range (>6 MV/cm for a 50 Å film), and the leakage currents became independent of dielectric thickness. The electron tunneling effective mass was found to be 0.2 m[sub e]. © 2003 American Institute of Physics.
ACCESSION #
11447589

 

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