Leakage mechanisms and dielectric properties of Al[sub 2]O[sub 3]/TiN-based metal-insulator-metal capacitors

Meng, Shuang; Basceri, C.; Busch, B. W.; Derderian, G.; Sandhu, G.
November 2003
Applied Physics Letters;11/24/2003, Vol. 83 Issue 21, p4429
Academic Journal
We characterized thin Al[sub 2]O[sub 3] dielectrics with TiN electrodes in a three-dimensional, high-aspect-ratio, metal–insulator–metal capacitor structure. Transmission electron microscopy images did not reveal any interfacial layer(s) or intermixing of the films. This was confirmed by series capacitance analysis. Extensive electrical characterization indicated a well-behaved dielectric response. Time and frequency domain measurements did not show any significant dielectric relaxation. Charge transport was controlled by a direct tunneling mechanism in the field range of 1.5 to 6 MV/cm for a 50 Å film. The Fowler–Nordheim tunneling mechanism dominated the high field range (>6 MV/cm for a 50 Å film), and the leakage currents became independent of dielectric thickness. The electron tunneling effective mass was found to be 0.2 m[sub e]. © 2003 American Institute of Physics.


Related Articles

  • Photovoltaic mechanism of Pb2CrO5 ceramic disk with a pair of planar electrodes. Toda, Kohji; Yoshida, Shinzo // Journal of Applied Physics;3/1/1988, Vol. 63 Issue 5, p1580 

    Presents a study which examined the photovoltaic mechanism of a dielectric lead[sub 2]chromium oxygen[sub 5] ceramic disk with a pair of planar electrodes. Device fabrication; Theoretical analysis; Experimental results and discussion.

  • Control of size and morphology in Ni particles prepared by spray pyrolysis. Park, S. H.; Kim, C. H.; Kang, Y. C.; Kim, Y. H. // Journal of Materials Science Letters;Nov2003, Vol. 22 Issue 21, p1537 

    This article focuses on the control of size and morphology in nickel particles prepared by spray pyrolysis. Recently, dielectric layers are made thinner and the number of these layers has been increased in order to meet the needs for MLCCs (multi layer ceramic condenser) being smaller in size...

  • Large actuation and high dielectric strength in metallized dielectric elastomer actuators. Hsien Low, Sze; Lynn Shiau, Li; Lau, Gih-Keong // Applied Physics Letters;4/30/2012, Vol. 100 Issue 18, p182901 

    Metal films are seldom used as compliant electrodes for dielectric elastomer actuator (DEA) because they tend to restrain deformation of soft dielectrics. This work showed that silver film electrodes formed by electroless deposition (ELD) are indeed stretchable, and the DEA using ELD silver...

  • Effect of Crack Formation on Stretchable Silver Electrode for Dielectric Elastomer Actuators. LOW Sze Hsien; LAU Gih-Keong // Advances in Science & Technology;2013, Vol. 79, p26 

    Thin metal films are not commonly used electrodes for dielectric elastomer actuators as it is a common presumption that they are too stiff to allow large actuated strains. However, using thin metal film electrodes can improve reliability due to their ability to self heal, as shown from their use...

  • Investigation of work function tuning using multiple layer metal gate electrodes stacks for complementary metal-oxide-semiconductor applications. Jha, Rashmi; JaeHoon Lee; Majhi, Prashant; Misra, Veena // Applied Physics Letters;11/28/2005, Vol. 87 Issue 22, p223503 

    Metal gate electrodes consisting of three layered stacks of metals are investigated for complementary metal-oxide-semiconductor device applications. It was observed that the effective work function of the entire gate electrode stack was dominated by the work function of the first metal layer (50...

  • The use of nanolaminates to obtain structurally stable high-K films with superior electrical properties: HfNO–HfTiO. Mikhelashvili, V.; Eisenstein, G.; Thangadurai, P.; Kaplan, W. D.; Brener, R.; Saguy, C. // Journal of Applied Physics;Jun2008, Vol. 103 Issue 11, p114106 

    We propose and demonstrate a metal-insulator-semiconductor (MIS) structure with a gate insulator based on a HfNO–HfTiO nanolaminate stack that has a total thickness of ∼5 nm. Two types of electrodes, Au and Cr, were used and their corresponding performances were compared. Advanced...

  • Electrode versus space-charge-limited conduction in organic light-emitting diodes. Wolf, U.; Barth, S. // Applied Physics Letters;10/4/1999, Vol. 75 Issue 14, p2035 

    Discusses a criterion established to distinguish electrode limited charge injection from a metal into a random organic dielectric from space charge limited current flow. Formalism to describe charge carrier injection across the interface of the metal and the dielectric; Probability for...

  • Dielectric–base transistor using YBa2Cu3O7-x/NdGaO3/SrTiO3 heterostructures. Yoshida, Akira; Tamura, Hirotaka; Takauchi, Hideki; Imamura, Takeshi; Hasuo, Shinya // Journal of Applied Physics;5/15/1992, Vol. 71 Issue 10, p5284 

    Reports on the transistor characteristics of a three-terminal structure having YBa[sub2]Cu[sub3]O[sub7-x] electrodes on an insulating SrTiO[sub3] substrate with an intervening NdGaO[sub3] barrier. Illustration of the device structure; Schematic band diagrams of emitter-grounded dielectric-base...

  • Effects of anneal ambients and Pt thickness on Pt/Ti and Pt/Ti/TiN interfacial reactions. Olowolafe, J. O.; Jones, R. E.; Campbell, A. C.; Hegde, R. I.; Mogab, C. J.; Gregory, R. B. // Journal of Applied Physics;2/15/1993, Vol. 73 Issue 4, p1764 

    Examines the effects of ambient anneal and platinum (Pt) thickness on the interdiffusion of Pt/Ti bilayers. Details of the experimental techniques used; Impact of low dielectric constant layer on the net charge storage density of capacitors; Summary of phases identified by X-ray diffraction...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics