Reversible shift of the transition temperature of manganites in planar field-effect devices patterned by atomic force microscope

Pallecchi, I.; Pelleqrino, L.; Bellinqeri, F.; Siri, A. S.; Marré, D.
November 2003
Applied Physics Letters;11/24/2003, Vol. 83 Issue 21, p4435
Academic Journal
A planar side-gate device for field effect with a La[sub 0.67]Ba[sub 0.33]MnO[sub 3] channel on a SrTiO[sub 3] substrate is fabricated by means of the voltage-biased tip of an atomic force microscope. The peculiar geometry and the high dielectric permittivity of the substrate enhance the channel resistance modulation up to 20% at low temperature by a gate voltage of ±40 V. Moreover, a reversible shift by 1.3 K of the metal–insulator transition temperature (T[sub MI]) by field effect is observed. The signs of the changes of resistance and T[sub MI] both depend on the sign of the gate voltage, as expected for pure field effect; in particular, the T[sub MI] is raised (lowered) by accumulating (depleting) holes in the channel. © 2003 American Institute of Physics.


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