Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers

Schwarz, U. T.; Sturm, E.; Wegscheider, W.; Kümmler, V.; Lell, A.; Härle, V.
November 2003
Applied Physics Letters;11/17/2003, Vol. 83 Issue 20, p4095
Academic Journal
Adapting the Hakki Paoli method to group III nitrides, we measure gain, differential gain, carrier-induced change of refractive index, carrier-induced phase shift, and the antiguiding factor. Our measurements also cover the low-carrier-density regime, in which spontaneous and piezoelectric fields and Coulomb interaction are only partially screened. This regime is most interesting as a comparison with existing theoretical simulations, including many-body effects. © 2003 American Institute of Physics.


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