Reduction of boron thermal diffusion in silicon by high energy fluorine implantation

Mubarek, H. A. W. El; Ashburn, P.
November 2003
Applied Physics Letters;11/17/2003, Vol. 83 Issue 20, p4134
Academic Journal
This letter investigates the effect of a deep F[sup +] implant on the diffusion of boron in silicon. The effects on boron thermal diffusion and transient enhanced diffusion are separately studied by characterizing the diffusion of a buried boron marker layer in wafers with and without a 185 keV, 2.3 ×10[sup 15] cm[sup -2] F[sup +] implant, and with and without a 288 keV, 6 ×10[sup 13] cm[sup -2] P[sup +] implant. In samples given both P[sup +] and F[sup +] implants, the fluorine completely eliminates the transient, enhanced boron diffusion caused by the P[sup +] implant, and in samples implanted with F[sup +] only, the fluorine suppresses the boron thermal diffusion by 65%. These results are explained by the effect of the fluorine on the vacancy concentration in the vicinity of the boron profile. © 2003 American Institute of Physics.


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