TITLE

Structural and optical properties of strain-compensated GaAsSb/GaAs quantum wells with high Sb composition

AUTHOR(S)
Zheng, X. H.; Jiang, D. S.; Johnson, S.; Zhang, Y. H.
PUB. DATE
November 2003
SOURCE
Applied Physics Letters;11/17/2003, Vol. 83 Issue 20, p4149
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The structural and optical properties of GaAsSb/GaAs quantum wells (QWs) and strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP QWs grown on a GaAs substrate by molecular beam epitaxy are investigated using high-resolution x-ray diffraction and photoluminescence (PL) measurements. We demonstrated that the insertion of tensile GaAsP layers into the active region of GaAsSb/GaAs QWs effectively improves the structural and optical quality. Even the Sb composition is as high as 0.39. The PL spectra at 11 K and room temperature indicate that the PL peak of strain-compensated QWs has a narrower linewidth and higher intensity in comparison to the sample without strain compensation. The results of PL peak blueshift with increasing excitation show the strain-compensated GaAsSb/GaAs interface characteristic of type-I band alignment. © 2003 American Institute of Physics.
ACCESSION #
11421598

 

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