Long-wavelength emission from nitridized InAs quantum dots

Kita, Takashi; Masuda, Yoshitaka; Mori, Takayoshi; Wada, Osamu
November 2003
Applied Physics Letters;11/17/2003, Vol. 83 Issue 20, p4152
Academic Journal
A technique to grow InAs quantum dots (QDs) to extend the emission wavelength into 1.3 μm range has been developed. We performed nitridation after growing InAs QDs by molecular-beam epitaxy. During nitridation, the reflection high-energy electron diffraction keeps chevron patterns, as well as streak rods, coming from the wetting layer. A longer-wavelength emission line with a narrower spectral linewidth compared with those of InAs QDs has been observed. © 2003 American Institute of Physics.


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