Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion

Chung Foong Tan, H. M.; Eng Fong Chor; Jinping Liu, H. M.; Hyeokjae Lee; Elgin Quek, H. M.; Lap Chan
November 2003
Applied Physics Letters;11/17/2003, Vol. 83 Issue 20, p4169
Academic Journal
It has been demonstrated that, by incorporating a thin ∼20 nm Si[sub 1-y]C[sub y] (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si[sub 1-y]C[sub y] layer was grown epitaxially followed by a silicon epitaxy cap of 60 nm. Indium implantations were performed at 1×10[sup 14] cm[sup -2] at 115 keV followed by spike annealing at 1050 °C. The experimentally observed EOR defect and enhanced diffusion elimination are explained based on the undersaturation of implantation-induced silicon interstitials with the presence of substitutional carbon at the Si[sub 1-y]C[sub y] layer. © 2003 American Institute of Physics.


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