Long coherence times at 300 K for nitrogen-vacancy center spins in diamond grown by chemical vapor deposition

Kennedy, T. A.; Colton, J. S.; Butler, J. E.; Linares, R. C.; Doering, P. J.
November 2003
Applied Physics Letters;11/17/2003, Vol. 83 Issue 20, p4190
Academic Journal
Electron-spin-echo experiments reveal phase-memory times as long as 58 μs at 300 K for nitrogen-vacancy centers in chemical vapor deposition (CVD) single crystals. The spins were optically polarized and optically detected. Two high-quality CVD samples were studied. From the current results, it is not clear whether these phase-memory times represent a fundamental limit or are limited by an external source of decoherence. © 2003 American Institute of Physics.


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