Intrinsic compensation of silicon-doped AlGaN

Wagener, M. C.; James, G. R.; Omnés, F.
November 2003
Applied Physics Letters;11/17/2003, Vol. 83 Issue 20, p4193
Academic Journal
The silicon doping characteristics of Al[sub x]Ga[sub 1-x]N were investigated over the x=0.2–0.5 composition range. A combination of Hall and capacitance–voltage measurements indicated a significant deepening of the Si level, as well as a systematic increase in carrier compensation with increasing compositions. Optical isothermal capacitance transient spectroscopy also revealed the presence of two midgap states with concentrations in the low 10[sup 17] cm[sup -3] range. The two levels, which are thought to be responsible for the observed compensation, have been assigned to the third and second ionization states of the aluminum vacancy. © 2003 American Institute of Physics.


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