High resistivity annealed low-temperature GaAs with 100 fs lifetimes

Gregory, I. S.; Baker, C.; Tribe, W. R.; Evans, M. J.; Beere, H. E.; Linfield, E. H.; Davies, A. G.; Missous, M.
November 2003
Applied Physics Letters;11/17/2003, Vol. 83 Issue 20, p4199
Academic Journal
We demonstrate the critical effect of postgrowth annealing temperature on the properties of low-temperature-grown GaAs. By using annealing temperatures substantially below the 500–600 °C commonly reported, GaAs with high resistivity and with carrier lifetimes as short as 100 fs can be routinely obtained. We discuss the optimum, but different, anneal conditions required for terahertz photoconductive emitters and detectors, and illustrate their use in a continuous-wave system. © 2003 American Institute of Physics.


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