Very low chemical disorder in epitaxial NiMnSb films on GaAs(111)B

van Roy, W.; Wójcik, M.; J&ecedil;dryka, E.; Nadolski, S.; Jalabert, D.; Brijs, B.; Borghs, G.; de Boeck, J.
November 2003
Applied Physics Letters;11/17/2003, Vol. 83 Issue 20, p4214
Academic Journal
Single-crystalline NiMnSb(111) films with negligibly low defect levels have been grown epitaxially on GaAs(111)B using molecular beam epitaxy and characterized by nuclear magnetic resonance. In a film with only 1% deviation from stoichiometry, 1.1% of all Mn atoms is involved in planar defects, ∼0.5% of all Sb sites is occupied by As[sub Sb] substitutional atoms, and ∼0.2% of all Sb atoms has a modified environment. Both the average concentration of defects and the interface orientation are compatible with maintaining a half-metallic band structure at the ferromagnet/semiconductor interface, making these films a good candidate for spin injection into a semiconductor. © 2003 American Institute of Physics.


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