TITLE

Enhancement of Curie temperature in Ga[sub 1-x]Mn[sub x]As/Ga[sub 1-y]Al[sub y]As ferromagnetic heterostructures by Be modulation doping

AUTHOR(S)
Wojtowicz, T.; Lim, W. L.; Liu, X.; Dobrowolska, M.; K.#Furdyna, J.; Yu, K. M.; Walukiewicz, W.; Vurgaftman, i.; Meyer, J. R.
PUB. DATE
November 2003
SOURCE
Applied Physics Letters;11/17/2003, Vol. 83 Issue 20, p4220
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effect of modulation doping by Be on the ferromagnetic properties of Ga[sub 1-x]Mn[sub x]As is investigated in Ga[sub 1-x]Mn[sub x]As/Ga[sub 1-y]Al[sub y]As heterojunctions and quantum wells. Introducing Be acceptors into the Ga[sub 1-y]Al[sub y]As barriers leads to an increase of the Curie temperature T[sub C] of Ga[sub 1-x]Mn[sub x]As, from 70 K in undoped structures to over 100 K with the modulation doping. This increase is qualitatively consistent with a multiband mean field theory simulation of carrier-mediated ferromagnetism. An important feature is that the increase of T[sub C] occurs only in those structures where the modulation doping is introduced after the deposition of the magnetic layer, but not when the Be-doped layer is grown first. This behavior is expected from the strong sensitivity of Mn interstitial formation to the value of the Fermi energy during growth. © 2003 American Institute of Physics.
ACCESSION #
11421574

 

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