Quantitative scanning capacitance spectroscopy

Brezna, W.; Schramboeck, M.; Lugstein, A.; Harasek, S.; Enichlmair, H.; Bertagnolli, E.; Gornik, E.; Smoliner, J.
November 2003
Applied Physics Letters;11/17/2003, Vol. 83 Issue 20, p4253
Academic Journal
In this work, a setup for quantitative scanning capacitance spectroscopy is introduced, where an ultrahigh precision, calibrated capacitance bridge is used together with a commercially available atomic force microscope (AFM). We show that capacitance data measured with this setup are of comparable quality as data obtained on macroscopic metal oxide semiconductor capacitors. In addition, our setup is sensitive enough to resolve the energy distribution of interface traps with the spatial resolution of an AFM. This is an advantage compared to conventional scanning capacitance microscopes, which have a limited energy resolution and only yield qualitative results due to large modulation voltages. © 2003 American Institute of Physics.


Related Articles

  • Enhanced Spatial Resolution Electrical Scanning Probe Microscopy By Using Carbon Nanotube Terminated Tips. Kopanski, Joseph J.; Sitnitsky, Ilona; Vartanian, Victor; McClure, Paul; Mancevski, Vladimir // AIP Conference Proceedings;11/15/2011, Vol. 1395 Issue 1, p123 

    Electrical scanning probe microscopes (SPMs), such as the scanning capacitance microscope for two dimensional dopant profiling, scanning Kelvin force microscope for surface potential measurements, and the tunneling atomic force microscope for dielectric integrity measurements, are important...

  • Nanoscale electrical characterization of trap-assisted quasibreakdown fluctuations in SiO2. Pakes, C. I.; Ramelow, S.; Prawer, S.; Jamieson, D. N. // Applied Physics Letters;4/19/2004, Vol. 84 Issue 16, p3142 

    Conductive atomic force microscopy has been used to electrically image quasibreakdown sites in thin, native SiO2 films. Local current–voltage spectroscopy reveals, at individual sites, fluctuations in the breakdown current between well-defined conductivity states. Theoretical modeling has...

  • In situ electric field simulation in metal/insulator/metal capacitors. Gaillard, Nicolas; Pinzelli, Luc; Gros-Jean, Mickael; Bsiesy, Ahmad // Applied Physics Letters;9/25/2006, Vol. 89 Issue 13, p133506 

    The authors report in this letter the effect of interface topography on metal/insulator/metal (MIM) capacitor electrical properties. This analysis was carried out by numerical simulations of the electric field established in a MIM structure with a 45 nm thick Ta2O5 film. The metal/insulator...

  • Fabrication of 0.1 micrometer metal oxide semiconductor field-effect transistors with the atomic.... Minne, S.C.; Soh, H.T. // Applied Physics Letters;2/6/1995, Vol. 66 Issue 6, p703 

    Analyzes the fabrication of a metal oxide semiconductor field effect transistor on silicon using atomic force microscope. Details on lithography at gate level; Role of electric-field-enhanced selective oxidation; Information on gate pattern.

  • Reliability properties of metal-oxide-semiconductor capacitors using HfO2 high-κ dielectric. Chen, Chun-Heng; Chang, Ingram Yin-Ku; Lee, Joseph Ya-Min; Chiu, Fu-Chien; Chiouand, Yan-Kai; Wu, Tai-Bor // Applied Physics Letters;9/17/2007, Vol. 91 Issue 12, p123507 

    Metal-oxide-semiconductor capacitors with atomic layer deposited HfO2 dielectric were fabricated. The charge-to-breakdown (QBD) characteristics of the metal-oxide-semiconductor structure were investigated. The Weibull slopes β with thicknesses of 9.12, 8.2, and 6.51 nm are 3.42, 2.90, and...

  • Modeling and analysis of the admittance characteristics of n+ metal-oxide-semiconductor capacitors with oxide and interface states - Gd0.25Ga0.15O0.6/Ga2O3 on In0.53Ga0.47As. Paterson, G. W.; Holland, M. C.; Thayne, I. G.; Long, A. R. // Journal of Applied Physics;Apr2012, Vol. 111 Issue 7, p074109 

    The 300-K admittance characteristics of n+ In0.53Ga0.47As MOS capacitors with a dielectric stack of Gd0.25Ga0.15O0.6/Ga2O3 in as-grown condition are examined in detail and compared to an oxide trap model that we previously introduced. The model explains many of the observed features not...

  • Electromechanical probing of ionic currents in energy storage materials. Morozovska, A. N.; Eliseev, E. A.; Kalinin, S. V. // Applied Physics Letters;5/31/2010, Vol. 96 Issue 22, p222906 

    The electrochemical processes in energy storage materials are generally linked with changes of molar volume of the host compound. Here, the frequency dependent strain response of one-dimensional electrochemically active system to periodic electric bias is analyzed. The sensitivity and resolution...

  • A Raman-atomic force microscope for apertureless-near-field spectroscopy and optical trapping. Anderson, Mark S.; Pike, William T. // Review of Scientific Instruments;Mar2002, Vol. 73 Issue 3, p1198 

    An instrument that combines the analytical power of Raman spectroscopy with the spatial resolution of the Atomic Force Microscope (AFM) is presented. This instrument is capable of resolving 50 nm scale spectral features or better by using surface enhanced Raman scattering at the AFM tip. The...

  • Effect of Microwave Annealing on Silicon Dioxide/Silicon Carbide Structures. Bacherikov, Yu. Yu.; Konakova, R. V.; Kocherov, A. N.; Lytvyn, P. M.; Lytvyn, O. S.; Okhrimenko, O. B.; Svetlichnyi, A. M. // Technical Physics;May2003, Vol. 48 Issue 5, p598 

    Abstract-The methods of atomic force microscopy and optical absorption spectroscopy are applied to study (the effect of microwave treatment on the properties of SiO)2(/SiC structures obtained by rapid thermal annealing) and conventional thermal oxidation in steam. From the variation of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics