Amorphous germanium recombination junctions in amorphous-silicon-based tandem solar cells

Ganguly, G.; Carlson, D. E.; Arya, R. R.
November 2003
Applied Physics Letters;11/17/2003, Vol. 83 Issue 20, p4256
Academic Journal
The recombination junction between two cells in amorphous-silicon-based tandem devices can be improved by inserting doped nanocrystalline silicon layers, which have higher conductivities, between doped amorphous silicon layers. However, long deposition times (∼15 min) are required to nucleate and grow these thin nanocrystalline silicon layers on an amorphous-silicon layer. We show that by increasing the phosphorus doping in the amorphous silicon n layer, and replacing the nanocrystalline silicon layers with amorphous germanium layers, a similar performance is obtained with a shorter (∼1 min) deposition time. © 2003 American Institute of Physics.


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