Band offset measurements of the GaN (0001)/HfO[sub 2] interface

Cook Jr., T.E.; Fulton, C.C.; Mecouch, W.J.; Davis, R.F.; Lucovsky, G.; Nemanich, R.J.
December 2003
Journal of Applied Physics;12/1/2003, Vol. 94 Issue 11, p7155
Academic Journal
Photoemission spectroscopy has been used to observe the interface electronic states as HfO[sub 2] was deposited on clean n-type Ga-face GaN (0001) surfaces. The HfO[sub 2] was formed by repeated deposition of several monolayers of Hf followed by remote plasma oxidation at 300 °C, and a 650 °C densification anneal. The 650 °C anneal resulted in a 0.6 and 0.4 eV change in band bending and valence band offset, respectively. The final annealed GaN/HfO[sub 2] interface exhibited a valence band offset of 0.3 eV and a conduction band offset of 2.1 eV. A 2.0 eV deviation was found from the electron affinity band offset model. © 2003 American Institute of Physics.


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