TITLE

Electrical properties of chemical-solution-derived Bi[sub 3.54]Nd[sub 0.46]Ti[sub 3]O[sub 12] ferroelectric thin films

AUTHOR(S)
Di Wu; Yidong Xia, K.; Aidong Li; Zhiguo Liu; Naiben Ming
PUB. DATE
December 2003
SOURCE
Journal of Applied Physics;12/1/2003, Vol. 94 Issue 11, p7376
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Bi[sub 3.54]Nd[sub 0.46]Ti[sub 3]O[sub 12] (BNdT) thin films were prepared on Pt/TiO[sub 2]/SiO[sub 2]/Si substrates by chemical solution deposition. X-ray diffraction measurement indicated the polycrystalline nature of these films. Ferroelectric, dielectric, and leakage current characteristics of Pt/BNdT/Pt capacitors were studied. The remanent polarization and coercive field were 8.5 μC/cm[sup 2] and 47 kV/cm, respectively, at 5 V stimulative voltage. The relative permittivity and dissipation factor at 100 kHz were around 510 and below 0.02, respectively. Fatigue free behavior of BNdT thin films was confirmed by essentially constant polarizations during 100 kHz bipolar switching up to 1.4×10[sup 10] switches. The dependence of leakage current on dc voltage suggested Schottky and Poole-Frenkel emission behavior below 100 kV/cm, followed by dielectric breakdown. © 2003 American Institute of Physics.
ACCESSION #
11350723

 

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