TITLE

Operational stability of electrophosphorescent devices containing p and n doped transport layers

AUTHOR(S)
D'Andrade, Brian W.; Forrest, Stephen R.; Chwang, Anna B.
PUB. DATE
November 2003
SOURCE
Applied Physics Letters;11/10/2003, Vol. 83 Issue 19, p3858
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The operational stability of low-operating voltage p-i-n electrophosphorescent devices containing fac-tris(2-phenylpyridine) iridium as the emissive dopant is investigated. In these devices, Li-doped 4,7-diphenyl-1,10-phenanthroline (BPhen) served as an n-type electron transport layer, or as an undoped hole blocking layer (HBL), and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane doped 4,4[sup ′],4[sup ″]-tris(3-methylphenylphenylamino) triphenylamine served as a p-type hole transport layer. The glass transition temperature of BPhen can be increased by the addition of aluminum(III)bis(2-methyl-8-quinolinato)4-phenylphenolate (BAlq), resulting in improved morphological stability, thereby reducing device degradation. When thermally stable BAlq was used as a HBL in both p-i-n and undoped devices, the extrapolated operational lifetime (normalized to an initial luminance of 100 cd/m[sup 2]) of the p-i-n and undoped devices are 18 000 and 60 000 h, respectively, indicating that the presence of p and n dopants can accelerate device degradation. © 2003 American Institute of Physics.
ACCESSION #
11332792

 

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