Effect of the Si/SiO[sub 2] interface on self-diffusion of Si in semiconductor-grade SiO[sub 2]

Fukatsu, Shigeto; Takahashi, Tomonori; Itoh, Kohei M.; Uematsu, Masashi; Fujiwara, Akira; Kageshima, Hiroyuki; Takahashi, Yasuo; Shiraishi, Kenji; Gösele, Ulrich
November 2003
Applied Physics Letters;11/10/2003, Vol. 83 Issue 19, p3897
Academic Journal
Self-diffusion of ion-implanted [sup 30]Si in SiO[sub 2] formed directly on Si substrates by thermal oxidation was studied as a function of the temperature and SiO[sub 2] thickness (200, 300, and 650 nm). The diffusion coefficient increases by about an order of magnitude with decreasing SiO[sub 2] thickness from 650 to 200 nm when silicon–nitride capping layers are placed on top of the SiO[sub 2], i.e., the distance between the [sup 30]Si diffusers and Si/SiO[sub 2] interface has a strong influence. Because the stress on SiO[sub 2] by nitride estimated for such a change in diffusivity is unrealistically large, Si species, most likely SiO, generated at the Si/SiO[sub 2] interface and diffusing into SiO[sub 2] must be affecting the self-diffusion of Si in SiO[sub 2]. © 2003 American Institute of Physics.


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