Picosecond photocarrier-lifetime in ErAs:InGaAs at 1.55 μm

Sukhotin, M.; Brown, E.R.; Driscoll, D.; Hanson, M.; Gossard, A.C.
November 2003
Applied Physics Letters;11/10/2003, Vol. 83 Issue 19, p3921
Academic Journal
This letter reports the measurement of photocarrier lifetime in ErAs:InGaAs epitaxial material grown on InP substrates. The measurement technique is ultrafast time-resolved phototransmission using a 1.55 μm mode-locked erbium-doped fiber laser. A lifetime of 3.56 ps is found in a sample containing an InAlAs smoothing layer, compared to 0.96 ps in a sample without any InAlAs. The difference is explained using a model of ambipolar diffusion of photocarriers. © 2003 American Institute of Physics.


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