Electric characteristics of poly(3-hexylthiophene) organic field-effect transistors fabricated on O[sub 2] plasma-treated substrates

Yong Suk Yang, David A.; Seong Hyun Kim, David A.; Sang Chul Lim, David A.; Jeong-Ik Lee, David A.; Jung Hun Lee, David A.; Lee-Mi Do; Taehyong Zhung, David A.
November 2003
Applied Physics Letters;11/10/2003, Vol. 83 Issue 19, p3939
Academic Journal
Soluble conjugated polymers such as poly(3-hexylthiophene) (P3HT) are very promising candidates for a cheap electronic device on various substrates. In this study we report the effects of O[sub 2] plasma treatment of the substrates on the electrical properties of P3HT organic thin-film transistors and metal/insulator/organic semiconductor capacitors. Based on the results of a capacitance–voltage measurement, the effective charge density in the interface between P3HT and SiO[sub 2] layer treated by O[sub 2] plasma for 30 s was approximately -18.3 nC/cm[sup 2]. When the period of O[sub 2] plasma treatment was longer than 30 s, the field-effect mobility decreased since the amount of charge and the relaxation time constant of interface traps increased. © 2003 American Institute of Physics.


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