Isolated double quantum dot capacitively coupled to a single quantum dot single-electron transistor in silicon

Emiroglu, Emir G.; Hasko, David G.; Williams, David A.
November 2003
Applied Physics Letters;11/10/2003, Vol. 83 Issue 19, p3942
Academic Journal
We report electron transport measurements on a single-island single-electron transistor capacitively coupled to an isolated double quantum dot at 4.2 K. The structure is fabricated through trench isolation in silicon-on-insulator. We detect single-electron polarization of the isolated double quantum dot using the single-electron transistor as a sensitive electrometer, and estimate its charging energy. We observe a large suppression of current and modulation of Coulomb blockade peak heights as a function of applied gate voltages. © 2003 American Institute of Physics.


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