Development of epitaxial NbN/MgO/NbN–superconductor-insulator-superconductor mixers for operations over the Nb gap frequency

Kawakami, Akira; Uzawa, Yoshinori; Zhen Wang
November 2003
Applied Physics Letters;11/10/2003, Vol. 83 Issue 19, p3954
Academic Journal
We have developed fabrication processes for epitaxial NbN/MgO/NbN trilayers and epitaxial NbN/MgO/NbN tunnel junctions. We estimated the junction specific capacitances (C[sub S]) for designing fully epitaxial NbN–superconductor-insulator-superconductor (SIS) mixers by using Fiske steps. Tunnel junctions measuring 40×3 and 20×3 μm[sup 2] were fabricated, and Fiske steps caused by external magnetic fields were clearly observed in the I–V characteristics. The C[sub S] was estimated as a function of the product of the normal-state resistance and the junction area (R[sub N]A), and they were 73–120 fF/μm[sup 2] at 8800–90 Ω μm[sup 2]. We fabricated and tested a fully epitaxial NbN/MgO/NbN–SIS mixer. The mixer showed low-noise properties over the Nb gap frequency, and the lowest DSB receiver noise was 260 K at 795 GHz. © 2003 American Institute of Physics.


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