Prominent ferroelectricity of BiFeO[sub 3] thin films prepared by pulsed-laser deposition

Kwi Young Yun, D.A.; Noda, Minoru; Okuyama, Masanori
November 2003
Applied Physics Letters;11/10/2003, Vol. 83 Issue 19, p3981
Academic Journal
Ferroelectric BiFeO[sub 3] thin films have been prepared on Pt/TiO[sub 2]/SiO[sub 2]/Si substrates in various oxygen pressures of 0.001–0.1 Torr at a temperature as low as 450 °C by pulsed-laser deposition. The crystallinity of the films was studied by x-ray diffraction. X-ray photoelectron spectroscopy showed that the films have a single phase of perovskite BiFeO[sub 3]. The BiFeO[sub 3] thin films deposited at 0.01–0.1 Torr show good current-density–applied-voltage characteristics. It is obtained from polarization–electric-field characterization that 2P[sub r] is about 71.3 μC/cm[sup 2] and 2E[sub c] is 125 kV/cm. Stable current density and saturated ferroelectric hysteresis loop have been observed in BiFeO[sub 3] thin films. © 2003 American Institute of Physics.


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