Far-infrared absorption in GaAs:Te liquid phase epitaxial films

Cardozo, B.L.; Haller, E.E.; Reichertz, L.A.; Beeman, J.W.
November 2003
Applied Physics Letters;11/10/2003, Vol. 83 Issue 19, p3990
Academic Journal
The far-infrared absorption spectrum of n-type GaAs is of interest for applications such as GaAs photoconductors and blocked impurity band detectors. The linear optical absorption coefficients α for three n-type GaAs films of varying doping concentrations have been measured in the range of 10 to 100 cm[sup -1] using Fourier transform infrared spectrometry. These results show α having maximum values of between 46 cm[sup -1] at 1×10[sup 15] cm[sup -3] and approximately 800 cm[sup -1] at 2.1×10[sup 16] cm[sup -3]. The formation and widening of a donor impurity band with increasing impurity concentration is clearly demonstrated. © 2003 American Institute of Physics.


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