SiO[sub 2]-sheathed InS nanowires and SiO[sub 2] nanotubes

Li, Y.B.; Bando, Y.; Golberg, D.; Uemura, Y.
November 2003
Applied Physics Letters;11/10/2003, Vol. 83 Issue 19, p3999
Academic Journal
InS nanowires uniformly sheathed with amorphous SiO[sub 2] were synthesized via a physical vapor deposition process. InS nanowires were 20–100 nm in diameter, and the SiO[sub 2] sheaths were 5–20 nm in thickness. Single-crystalline InS cores displayed orthorhombic structure and their longitudinal directions were preferentially aligned in the [100] orientation. Pure SiO[sub 2] nanotubes of typically round cross sections were also obtained by removing InS cores from the prepared nanocables via thermal evaporation. Photoluminescence measurements on these SiO[sub 2] nanotubes demonstrated strong visible-light emission peaked at 570 nm. © 2003 American Institute of Physics.


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