TITLE

SiO[sub 2]-sheathed InS nanowires and SiO[sub 2] nanotubes

AUTHOR(S)
Li, Y.B.; Bando, Y.; Golberg, D.; Uemura, Y.
PUB. DATE
November 2003
SOURCE
Applied Physics Letters;11/10/2003, Vol. 83 Issue 19, p3999
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
InS nanowires uniformly sheathed with amorphous SiO[sub 2] were synthesized via a physical vapor deposition process. InS nanowires were 20–100 nm in diameter, and the SiO[sub 2] sheaths were 5–20 nm in thickness. Single-crystalline InS cores displayed orthorhombic structure and their longitudinal directions were preferentially aligned in the [100] orientation. Pure SiO[sub 2] nanotubes of typically round cross sections were also obtained by removing InS cores from the prepared nanocables via thermal evaporation. Photoluminescence measurements on these SiO[sub 2] nanotubes demonstrated strong visible-light emission peaked at 570 nm. © 2003 American Institute of Physics.
ACCESSION #
11332745

 

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