TITLE

In situ control of the focused-electron-beam-induced deposition process

AUTHOR(S)
Bret, T.; Utke, I.; Bachmann, A.; Hoffmann, P.
PUB. DATE
November 2003
SOURCE
Applied Physics Letters;11/10/2003, Vol. 83 Issue 19, p4005
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A simple quantitative method for in situ control of the focused-electron-beam-induced deposition process is discussed and demonstrated with precursors used for Au, Cu, Rh, and SiO[sub 2] deposition. A picoamperemeter monitors the electron current flowing through the sample, which reproducibly drops at a characteristic rate to a plateau value during deposition. These parameters are correlated to deposit geometry, composition, and precursor supply. Monte Carlo simulations of electron backscattering and secondary electron emission by the growing structures show excellent agreement with the experiment. The method could apply to a wide range of charged-particle deposition and etching processes. © 2003 American Institute of Physics.
ACCESSION #
11332743

 

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