Fabrication of homostructural ZnO p–n junctions and ohmic contacts to arsenic-doped p-type ZnO

Ryu, Y.R.; Lee, T.S.; Leem, J.H.; White, H.W.
November 2003
Applied Physics Letters;11/10/2003, Vol. 83 Issue 19, p4032
Academic Journal
We report fabrication of homostructural ZnO p–n junctions that contain arsenic (As)-doped ZnO (ZnO:As) and intrinsic n-type ZnO layers. We also describe the metallization process for forming ohmic contacts to p-type ZnO. ZnO films were synthesized on n-type SiC substrates by hybrid beam deposition. Ni/Au metal contacts show linear I–V characteristics indicative of ohmic behavior, while other metal contacts (e.g., In/Au and Ti/Au) show nonlinear characteristics with rectification that reveal the presence of Schottky barriers. The characteristics for p–n junctions composed of ZnO layers are confirmed by I–V measurements. © 2003 American Institute of Physics.


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