Electron drift velocity in AlGaN/GaN channel at high electric fields

Ardaravičius, L.; Matulionis, A.; Liberis, J.; Kiprijanovic, O.; Ramonas, M.; Eastman, L.F.; Shealy, J.R.; Vertiatchikn, A.
November 2003
Applied Physics Letters;11/10/2003, Vol. 83 Issue 19, p4038
Academic Journal
Current–voltage characteristics of a nominally undoped AlGaN/GaN two-dimensional electron gas channel is measured at a room temperature, and electron drift velocity is deduced under assumption of uniform electric field and field-independent electron density. No velocity saturation is reached at fields up to 130 kV/cm, when the effect of Joule heating is minimized through application of nanosecond pulses of voltage. The estimated drift velocity is near 2×10[sup 7] cm/s at 130 kV/cm. Monte Carlo simulation of the drift velocity is carried out with and without effects of channel self-heating for a many-subband model, with hot phonons and electron gas degeneracy taken into account. © 2003 American Institute of Physics.


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