TITLE

Small angle x-ray scattering for sub-100 nm pattern characterization

AUTHOR(S)
Jones, Ronald L.; Tengjiao Hu; Lin, Eric K.; Wen-Li Wu; Kolb, Rainer; Casa, Diego M.; Bolton, Patrick J.; Barclay, George G.
PUB. DATE
November 2003
SOURCE
Applied Physics Letters;11/10/2003, Vol. 83 Issue 19, p4059
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Characterization of sub-100 nm photolithographic patterns with nanometer scale resolution is demonstrated using small angle x-ray scattering. The transmission scattering geometry employed potentially enables high throughput measurements for future technology nodes of the semiconductor industry, organic and inorganic nanoscale devices, and three-dimensional structures. The method is demonstrated through the characterization of a series of polymer photoresist gratings using a synchrotron x-ray source. Quantities, such as periodicity and line width, are extracted using minimal modeling. Additional quantities and the potential of a laboratory-based x-ray system are briefly discussed. © 2003 American Institute of Physics.
ACCESSION #
11332725

 

Related Articles

  • Sequential shrink photolithography for plastic microlens arrays. Dyer, David; Shreim, Samir; Jayadev, Shreshta; Lew, Valerie; Botvinick, Elliot; Khine, Michelle // Applied Physics Letters;7/18/2011, Vol. 99 Issue 3, p034102 

    Endeavoring to push the boundaries of microfabrication with shrinkable polymers, we have developed a sequential shrink photolithography process. We demonstrate the utility of this approach by rapidly fabricating plastic microlens arrays. First, we create a mask out of the children's toy Shrinky...

  • Fabrication of arrays of two-dimensional micropatterns using microspheres as lenses for projection photolithography. Wu, Ming-Hsien; Whitesides, George M. // Applied Physics Letters;4/16/2001, Vol. 78 Issue 16, p2273 

    This letter demonstrates the use of an array of transparent microspheres in forming repetitive, micrometer-scale patterns in photoresist, starting from masks with centimeter-scale patterns. A transparent microsphere with diameter d>1.5 μm acts as a lens and reduces centimeter-scale images...

  • The challenges in materials design for 157nm photoresists. Patterson, Kyle; Somervell, Mark; Willson, C. Grant // Solid State Technology;Mar2000, Vol. 43 Issue 3, p41 

    Part II. Deals with materials design used in the lithography of photoresists. Information on damaging ultraviolet lithographic technologies; Details on the efforts to develop 157nm lithography; Application of single-layer photoresist process for imaging at 157 nm; How to achieve solubility in...

  • Fabrication of 100 nm metal lines on flexible plastic substrate using ultraviolet curing nanoimprint lithography. Heon Lee; Sunghoon Hong; Kiyeon Yang; Kyungwoo Choi // Applied Physics Letters;4/3/2006, Vol. 88 Issue 14, p143112 

    Since polymer is flexible, lightweight, reliable and transparent and its material properties can easily be modified, it is a suitable substrate material for organic electronic devices, biomedical devices, and especially for flexible displays. To build a nano-device on a polymer substrate, nano...

  • PATTERNING THE WORLD. Brock, David C. // Chemical Heritage;Fall2007, Vol. 25 Issue 3, p26 

    The article chronicles the development of chemically amplified photoresists in the late 20th century. In the 1970s, photolithographic procedures used light from the near-ultraviolet and mid-ultraviolet ranges at 365 and 313 nanometers, respectively. During this period, IBM produced its own...

  • Self-developing photoresist using a vacuum ultraviolet F2 excimer laser exposure. Henderson, D.; White, J. C.; Craighead, H. G.; Adesida, I. // Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p900 

    An F[sub 2] excimer laser at 157 nm has been used for the first time as an exposure source for high resolution photolithography with the self-developing resist nitrocellulose. Ablative development of the nitrocellulose was observed for 157-nm energy densities greater than 0.025 J/cm². Stencil...

  • Growth Of Patterned SWNTs From Catalysts Fabricated By Direct Photolithography. Shaoming Huang; Jie Liu // AIP Conference Proceedings;2003, Vol. 685 Issue 1, p103 

    A novel feasible method to pattern SWNTs with different resolutions on surface in large scale by direct photolithography has been demonstrated. It involves the direct photolithographical patterning of catalysts on substrate by incorporating catalyst precursor into photoresist and then growing...

  • ELECTRONIC CHEMICALS. Hunter, David // Chemical Week;1/9/2002, Vol. 164 Issue 2, p9 

    Reports on the first commercial photoresist for use with 157-nanometer photolithographic tools produced by Clariant. Technology used in the resist of Clariant; Materials used in the resist; Other groups developing fluoropolymer-based resists.

  • Nondestructive photolithography of conducting polymer structures. Chan, J. R.; Huang, X. Q.; Song, A. M. // Journal of Applied Physics;1/15/2006, Vol. 99 Issue 2, p023710 

    We have demonstrated a nondestructive method using ultraviolet (UV) photolithography to fabricate micrometer-sized conducting polymer structures. By coating a polymer film on patterned photoresist and then performing liftoff, UV exposure to the conducting polymer film was prevented throughout...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics