Less power, more action

Pierce, Julie
October 2003
Engineer (00137758);10/24/2003, Vol. 292 Issue 7638, p13
Reports on Ohio State University researchers' development of a diode that holds promise of more efficient electronic devices with lower power consumption. Features of the device; Conduction capacity of tunnel diodes.


Related Articles

  • Use the Two-Step Diode Test. Colombo, Al // SDM: Security Distributing & Marketing;Dec98, Vol. 28 Issue 16, p22 

    Explains a two-step test used by installers and technicians when checking diodes. Description of diodes; Forward-bias condition; Forward-to-reverse resistance.

  • Electron flow and impedance of an 18-blade frustum diode. Sanford, T. W. L.; Lee, J. R.; Halbleib, J. A.; Quintenz, J. P.; Coats, R. S.; Stygar, W. A.; Clark, R. E.; Faucett, D. L.; Webb, D.; Heath, C. E.; Spence, P. W.; Kishi, J.; Schlitt, L. G.; Morton, D. // Journal of Applied Physics;6/1/1986, Vol. 59 Issue 11, p3868 

    Describes an 18 blade frustum diode which was tested on short pulse experimental electron device. Discussion on diode geometry; Diagnostics used to monitor the diode behavior; Illustration of the nominal operating parameters of the diode.

  • LEDs shine brightly through sunlight. Raymond, Martha K. // Machine Design;10/09/97, Vol. 69 Issue 19, p62 

    Introduces the panel-mount reflector light-emitting diodes designed by Data Display Products in El Segundo, California. Features of the LEDs.

  • Stochastic electron motion in magnetically insulated diodes. Desjarlais, M. P.; Sudan, R. N. // Physics of Fluids (00319171);Apr86, Vol. 29 Issue 4, p1245 

    The transition to stochasticity is investigated for electron motion in the field configuration of a magnetically insulated diode. The model system is planar and periodic. The equilibria studied are nonrelativistic with constant electron density across the sheath. This class of equilibria...

  • Electron diffusion and leakage currents in magnetically insulated diodes. Desjarlais, M. P.; Sudan, R. N. // Physics of Fluids (00319171);May87, Vol. 30 Issue 5, p1536 

    The diffusion of stochastic electrons and the associated leakage current is investigated for magnetically insulated diodes and gaps. The model system is planar and periodic in the drift direction of the electrons. The stochasticity results from periodic perturbations of nonrelativistic,...

  • Long-Term Variation of Electrical and Photoelectric Characteristics of Pd–p-InP Diode Structures. Slobodchikov, S. V.; Salikhov, Kh. M.; Russu, E. V. // Semiconductors;Apr2002, Vol. 36 Issue 4, p476 

    Electrical and photoelectric characteristics of Pd-p-InP diode structures were studied after their storage in air for many years. An increase in the Schottky barrier height by 0.2-0.3 eV and a rise in photosensitivity were revealed. The current transport mechanism is governed by a...

  • Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature peak-to-valley ratio. Duschl, R.; Schmidt, O. G.; Eberl, K. // Applied Physics Letters;2/14/2000, Vol. 76 Issue 7 

    Room-temperature current-voltage characteristics of Si/Si[sub 1-x]Ge[sub x]/Si p[sup +]-i-n[sup +] interband tunneling diodes are presented. Special attention is paid to the peak current density (PCD) and the peak-to-valley current ratio (PVCR) of the devices. A variation of the SiGe layer width...

  • Fully programmable single-photon detection module for InGaAs/InP single-photon avalanche diodes with clean and sub-nanosecond gating transitions. Tosi, Alberto; Della Frera, Adriano; Bahgat Shehata, Andrea; Scarcella, Carmelo // Review of Scientific Instruments;Jan2012, Vol. 83 Issue 1, p013104 

    We present the design and characterization of a modern near-infrared photon counting module, able to exploit the best performance of InGaAs/InP single-photon avalanche diodes for the detection of fast and faint optical signals up to 1.7 μm. Such instrument is suitable for many applications,...

  • Electrical properties of 1N4007 silicon diode. Nanda, K.K.; Sarangi, S.N. // Review of Scientific Instruments;Jul97, Vol. 68 Issue 7, p2904 

    Focuses on the electrical properties of 1N4007 silicon semiconductor diode. Forward voltage characteristics; Capacitance voltage measurements of p-n junctions; Estimated band gap.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics