TITLE

Controlling the carrier lifetime of nearly threading-dislocation-free ZnO homoepitaxial films by 3d transition-metal doping

AUTHOR(S)
Chichibu, S. F.; Kojima, K.; Yamazaki, Y.; Furusawa, K.; Uedono, A.
PUB. DATE
January 2016
SOURCE
Applied Physics Letters;1/11/2016, Vol. 108 Issue 2, p1
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Carrier lifetime in nearly threading-dislocation-free ZnO homoepitaxial films was controlled by doping 3d transition-metals (TMs), Ni and Mn. The photoluminescence lifetime of the near-bandedge emission (τPL) was decreased linearly by increasing TM concentration, indicating that such TMs are predominant nonradiative recombination centers (NRCs). From this relationship, exciton capture-cross-section (σex) of 2.4×10-15 cm² is obtained. Because rex of native-NRCs (Zn-vacancy complexes) is likely larger than this value, the linear dependence of the internal quantum efficiency on τPL observed in our TM-doped ZnO and unintentionally doped ZnO in literatures indicates that the concentrations of native-NRCs in the latter are "lower than" 1016-1017cm-3.
ACCESSION #
112326493

 

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