Mechanism for the increased light transmission through Ni/Au/ZnO contacts on p-GaN for high power optoelectronic devices

Tseng, C. L.; Youh, M. J.; Moore, G. P.; Hopkins, M. A.; Stevens, R.; Wang, W. N.
November 2003
Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3677
Academic Journal
The mechanisms responsible for the transparency of Ni/Au and Ni/Au/ZnO on p-GaN has been investigated. It was found that the optical transmission of Ni/Au contacts is dominated by the film thickness and morphology. A change in film thickness, induced by thermal annealing, results in a more transparent contact material. In addition a ZnO film was used as an antireflection layer on top of a Ni/Au contact. The Ni/Au/ZnO film was found to have an increased light transmission of 15% compared with an annealed Ni/Au contact. The maximum optical transmission measured through the Ni/Au/ZnO contact was 90%. © 2003 American Institute of Physics.


Related Articles

  • A GaN bulk crystal with improved structural quality grown by the ammonothermal method. Hashimoto, Tadao; Feng Wu; Speck, James S.; Nakamura, Shuji // Nature Materials;Aug2007, Vol. 6 Issue 8, p568 

    The realization of high-performance optoelectronic devices, based on GaN and other nitride semiconductors, requires the existence of a high-quality substrate. Non-polar or semipolar substrates have recently been proven to provide superior optical devices to those on conventional c-plane...

  • Steady-state and transient electron transport within the wide energy gap compound semiconductors gallium nitride and zinc oxide: an updated and critical review. Hadi, Walid; O'Leary, Stephen; Shur, Michael // Journal of Materials Science: Materials in Electronics;Nov2014, Vol. 25 Issue 11, p4675 

    The wide energy gap compound semiconductors, gallium nitride and zinc oxide, are widely recognized as promising materials for novel electronic and optoelectronic device applications. As informed device design requires a firm grasp of the material properties of the underlying electronic...

  • Relaxation of packaging-induced strains in AlGaAs-based high-power diode laser arrays. Tien, Tran Quoc; Gerhardt, Axel; Schwirzke-Schaaf, Sandy; Tomm, Jens W.; Müntz, Holger; Biesenbach, Jens; Oudart, Myriam; Nagle, Julien; Biermann, Mark L. // Applied Physics Letters;3/7/2005, Vol. 86 Issue 10, p101911 

    We monitor the mechanical strain evolution with typical use in the quantum well of AlGaAs/GaAs-based high-power diode laser arrays (cm bars) by spectroscopic means. We show experimentally that pristine devices are essentially uniaxially compressed along the 110-direction with a strain maximum of...

  • The Synthesis and Photoelectric Properties of Si–(Si2)1 – x(ZnS)x Epitaxial Structures. Sapaev, B.; Saidov, A. S. // Technical Physics Letters;Sep2004, Vol. 30 Issue 9, p715 

    Epitaxial layers of (Si2)1 - x(ZnS)x(0.08????x????0.92) solid solutions were grown by liquid phase epitaxy from a tin-based solution melt confined between two horizontal polycrystalline silicon substrates. The morphology, photoelectric properties, and current-voltage characteristics of the...

  • O/E Component Testing Pitfalls. Shores, Michael C. // Circuits Assembly;Jul2005, Vol. 16 Issue 7, p44 

    This article discusses the setbacks of optoelectronics component testing. Compared to electronics, optoelectronics technology in telecommunication is still evolving and at a stage similar to the Optical Vacuum Tube Era. The transmission speed for optical communications rose from 52...

  • Winner-Take-All Neural Network with Massively Optoelectronic Interconnections. Ali, Wissam H.; Abdalla, Ahmed N.; Ali, Wa'l H. // American Journal of Applied Sciences;2008, Vol. 6 Issue 2, p268 

    The increased interconnection density, bandwidth, nonlocality and fan-out-fan-in offered by optics over conventional electronic technologies make it a very attractive medium for a variety of application particularity in the field of communication system implementation for all types of computing...

  • An optoelectronic system for automatic inspection of the external view of fuel pellets. Finogenov, L.; Beloborodov, A.; Ladygin, V.; Chugui, Yu.; Zagoruiko, N.; Gulyaevskii, S.; Shul’man, Yu.; Lavrenyuk, P.; Pimenov, Yu. // Russian Journal of Nondestructive Testing;Oct2007, Vol. 43 Issue 10, p692 

    Results of the development and testing of a system for automatic inspection of the external view of fuel pellets for fuel elements of reactors of nuclear power plants are presented. The system operates on the basis of the optoelectronic method for producing high-contrast images of the pellet...

  • Bragg grating in KTP stabilizes seed laser.  // Laser Focus World;Jul2005, Vol. 41 Issue 7, p13 

    Reports on the development of a lightweight and energy-efficient seed laser by engineers at AdvR in Bozeman, Montana. Ability of the laser to seed high-power solid-state lasers to eliminate fluctuations in intensity under high-power operation; Statement of AdvR vice president of technology...

  • Graded photonic crystal terahertz quantum cascade lasers. Chassagneux, Y.; Colombelli, R.; Maineult, W.; Barbieri, S.; Khanna, S. P.; Linfield, E. H.; Davies, A. G. // Applied Physics Letters;1/18/2010, Vol. 96 Issue 3, p031104 

    The use of integrated photonic structures to tailor the behavior of light is extremely promising for optimizing performance and for introducing advanced functionalities into optoelectronic devices. We demonstrate a powerful method based on photonic-band engineering which allows the optimization...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics