InAs quantum dots on the [formula] surface

Temko, Y.; Suzuki, T.; Xu, M. C.; Jacobi, K.
November 2003
Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3680
Academic Journal
We report on InAs quantum dots grown by molecular-beam epitaxy on the stable GaAs(&5sline;&2sline;&11sline;)B surface discovered recently. Atomically resolved scanning tunneling microscopy images acquired in situ reveal compact quantum dots terminated by (&1sline;0&1sline;),(0&1sline;&1sline;),and (&1sline;&1sline;&1sline;)B facets and an unresolved vicinal (00&1sline;)region. A flat base of (&3sline;&1sline;&5sline;)B orientation extends in front of the (&1sline;0&1sline;)and(&1sline;&1sline;&1sline;)B facets. The quantum dots exhibit a very narrow size distribution attributed to the well ordered substrate and to high nucleation efficiency.


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