Evolution of shape, height, and in-plane lattice constant of Ge-rich islands during capping with Si

Zhong, Zhenyang; Stangl, J.; Schãffler, F.; Bauer, G.
November 2003
Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3695
Academic Journal
The surface morphology of Ge-rich islands on Si (001) substrates capped with 0 to 10 monolayers (MLs) of Si at 550 °C was investigated by atomic force microscopy. An evolution of the island shape from domes to pyramids was observed, which coincides with a dramatic decrease of the island height during overgrowth. The average lateral lattice constant 〈a[sub ∥]〉 of the Ge-rich islands for a series of samples was obtained from grazing incidence x-ray diffraction. 〈a[sub ∥]〉 decreases appreciably with deposition of the Si cap layer, even for a cap thickness as low as 1.3 MLs. At the beginning of overgrowth, Si incorporation promotes the shape evolution and the size variation of the islands. © 2003 American Institute of Physics.


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