Oxidation rate enhancement of SiGe epitaxial films oxidized in dry ambient

Spadafora, M.; Privitera, G.; Terrasi, A.; Scalese, S.; Bongiorno, C.; Camera, A.; Di Marino, M.; Napolitani, F.
November 2003
Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3713
Academic Journal
We present a study on thin oxides obtained by rapid thermal oxidation of Si[sub 1-x]Ge[sub x] epitaxial layers. The oxidation processes were performed in dry O[sub 2] at 1000 °C for times up to 600 s. Our data show an oxide growth rate enhancement with respect to pure Si. Except for a very small amount of GeO[sub 2] that is found at the surface, all the Ge is rejected towards the SiO[sub 2]/SiGe interface, forming a Ge-enriched layer free of extended defects. The comparison of our results for dry processes with those reported in the literature for wet ambient supports the idea that the kinetics of SiGe oxidation is controlled by similar mechanisms in both cases, in contrast with models and interpretations so far proposed. © 2003 American Institute of Physics.


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