TITLE

Oxidation rate enhancement of SiGe epitaxial films oxidized in dry ambient

AUTHOR(S)
Spadafora, M.; Privitera, G.; Terrasi, A.; Scalese, S.; Bongiorno, C.; Camera, A.; Di Marino, M.; Napolitani, F.
PUB. DATE
November 2003
SOURCE
Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3713
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present a study on thin oxides obtained by rapid thermal oxidation of Si[sub 1-x]Ge[sub x] epitaxial layers. The oxidation processes were performed in dry O[sub 2] at 1000 °C for times up to 600 s. Our data show an oxide growth rate enhancement with respect to pure Si. Except for a very small amount of GeO[sub 2] that is found at the surface, all the Ge is rejected towards the SiO[sub 2]/SiGe interface, forming a Ge-enriched layer free of extended defects. The comparison of our results for dry processes with those reported in the literature for wet ambient supports the idea that the kinetics of SiGe oxidation is controlled by similar mechanisms in both cases, in contrast with models and interpretations so far proposed. © 2003 American Institute of Physics.
ACCESSION #
11210022

 

Related Articles

  • Silicon vapor phase epitaxial growth catalysis by the presence of germane. Garone, P. M.; Sturm, J. C.; Schwartz, P. V.; Schwarz, S. A.; Wilkens, B. J. // Applied Physics Letters;3/26/1990, Vol. 56 Issue 13, p1275 

    Experiments involving the epitaxial growth of GexSi1-x films by chemical vapor deposition have shown that the addition of germane greatly enhances the growth rate, compared to that seen with dichlorosilane alone. Careful analysis shows that the increase is not accounted for by summing the...

  • Temperature dependence of dislocation photoresponse in relaxed GeSi films. Gray, Matthew H.; Hsu, J. W. P.; Hsu, J.W.P. // Applied Physics Letters;3/6/2000, Vol. 76 Issue 10 

    Using a near-field scanning optical microscope to perform local photocurrent measurements, we examine the temperature dependence of contrast associated with individual threading dislocations and crosshatch patterns from 12 to 300 K. The observed weak contrast at room temperature and a negative...

  • Oblique alignment of columns of self-organized Ge/Si(001) islands in multilayer structure. Huang, C. J.; Huang, C.J.; Li, D. Z.; Li, D.Z.; Cheng, B. W.; Cheng, B.W.; Yu, J. Z.; Yu, J.Z.; Wang, Q. M.; Wang, Q.M. // Applied Physics Letters;10/30/2000, Vol. 77 Issue 18 

    Ge/Si multilayer structures with a bimodal distribution of the island spacing in the first layer have been investigated by atomic-force microscopy and transmission electron microscopy. Besides the vertical alignment, some oblique alignments of stacked islands are observed. The presence of the...

  • Solid phase epitaxial regrowth of Si1-xGex/Si strained-layer structures amorphized by ion implantation. Chilton, B. T.; Robinson, B. J.; Thompson, D. A.; Jackman, T. E.; Baribeau, J.-M. // Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p42 

    Strained-layer structures consisting of ∼30–35 nm Si1-xGex (x=0.16–0.29) and 33 nm Si deposited by molecular beam epitaxy on a (100)Si substrate have been amorphized by ion implantation at 40 K with 120 keV As+. Rutherford backscattering/channeling measurements using 2 MeV He+...

  • Effect of Surface Segregation on the Sharpness of Heteroboundaries in Multilayered Si(Ge)/Si[sub 1 � ][sub x]Ge[sub x] Structures Grown from Atomic Beams in Vacuum. Ivina, N. L.; Orlov, L. K. // Physics of the Solid State;Jun2001, Vol. 43 Issue 6, p1182 

    The main reasons for composition intermixing in the vicinity of heteroboundaries in an Si(Ge)/Si[sub 1-x]Ge[sub x] heterosystem grown by the molecular beam epitaxy method are considered. The proposed model explains all the experimentally observed peculiarities, such as the clearly manifested...

  • Dependence of critical thickness on growth temperature in GexSi1-x/Si superlattices. Miles, R. H.; McGill, T. C.; Chow, P. P.; Johnson, D. C.; Hauenstein, R. J.; Nieh, C. W.; Strathman, M. D. // Applied Physics Letters;3/14/1988, Vol. 52 Issue 11, p916 

    We present direct evidence for the dependence of critical thickness on growth temperature in a lattice-mismatched epitaxial system. Ge0.5Si0.5/Si strained-layer superlattices have been grown by molecular beam epitaxy on (100) Si substrates at temperatures between 330 and 530 °C. The extent to...

  • The hydridation and nitridation of GeSi oxide annealed in ammonia. Liu, W. S.; Nicolet, M.-A.; Park, H.-H.; Koak, B.-H.; Lee, J.-W. // Journal of Applied Physics;8/15/1995, Vol. 78 Issue 4, p2631 

    Presents a study that analyzed a germanium (Ge)-silicon (Si)-oxygen film on GeSi, annealed in nitrogen-hydrogen by using Auger electron spectroscopy, backscattering spectrometry, x-ray photoelectron spectroscopy and secondary-ion mass spectrometry. Importance of silicon dioxide and nitride...

  • A method for fabricating dislocation-free tensile-strained SiGe films via the oxidation of porous Si substrates. Kim, Jeehwan; Li, Biyun; Xie, Ya-Hong // Applied Physics Letters;12/17/2007, Vol. 91 Issue 25, p252108 

    A method for fabricating tensile-strained SiGe films via the oxidation of porous Si substrates with thin SiGe overlayers is reported. A 100 nm thick Si0.77Ge0.23 film on a porous Si substrate is fabricated through self-limiting anodization of a heavily doped p-type Si substrate with an...

  • Characterization of epitaxial (Ca,Ba)F2 films on Si(111) substrates. Wittmer, M.; Smith, D. A.; Segmüller, Armin; Zogg, H.; Melchior, H. // Applied Physics Letters;10/6/1986, Vol. 49 Issue 14, p898 

    We have investigated epitaxial BaF2/CaF2 bilayers on Si(111) with ion channeling, grazing-incidence x-ray diffraction, and transmission electron microscopy. The BaF2 layer, which was grown on a thin intermediate CaF2 layer, showed a channeling minimum yield of 8% and a residual strain of 0.2%....

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics