TITLE

Effect of quantum-well confinement on acceptor state lifetime in δ -doped GaAs/AlAs multiple quantum wells

AUTHOR(S)
Zheng, W. M.; Halsall, M. P.; Harrison, P.; Wells, J.-P. R.; Bradley, I. V.; Steer, M. J.
PUB. DATE
November 2003
SOURCE
Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3719
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Using far-infrared time-resolved spectroscopy, we have investigated the effect of quantum-well confinement on the lifetime of shallow acceptor states in GaAs/AlAs multiple quantum wells with Be δ-doping at the well center. Low-temperature far-infrared absorption measurements clearly show three principal absorption lines due to transitions of Be acceptor states from the ground state to the first three odd-parity excited states, respectively. It is found that the lifetime of excited states monotonically reduces with decreasing quantum-well width, from 350 ps in bulk to 55 ps in a 100 Å well. We suggest that the effect of quantum-well confinement on zone-fold acoustic-phonon modes increases the intra-acceptor scattering rate of acoustic-phonon-assisted relaxation. © 2003 American Institute of Physics.
ACCESSION #
11210020

 

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