TITLE

Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping

AUTHOR(S)
Kazlauskas, K.; Tamulaitis, G.; Žukauskas, A.; Khan, M. A.; Yang, J. W.; Zhang, J.; Simm, G.; Shur, M. S.; Gaska, R.
PUB. DATE
November 2003
SOURCE
Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3722
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The temperature dependences of the peak position and width of the photoluminescence band in Al[sub 0.1]In[sub 0.01]Ga[sub 0.89]N layers were explained by Monte Carlo simulation of exciton localization and hopping. The introduction of a doubled-scaled potential profile due to inhomogeneous distribution of indium allowed obtaining a good quantitative fit of the experimental data. Hopping of excitons was assumed to occur through localized states distributed on a 16 meV energy scale within the In-rich clusters with the average energy in these clusters dispersed on a larger (42 meV) scale. © 2003 American Institute of Physics.
ACCESSION #
11210019

 

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